S1JLSH
Taiwan Semiconductor Corporation
English
Part Number: | S1JLSH |
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Manufacturer/Brand: | Taiwan Semiconductor |
Part of Description: | 1.2A, 600V, STANDARD RECOVERY RE |
Datasheets: |
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RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
Share: |
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
20000+ | $0.0602 |
40000+ | $0.0565 |
60000+ | $0.0543 |
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Product Attribute | Attribute Value |
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Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1.2 A |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Technology | Standard |
Supplier Device Package | SOD-123HE |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Series | Automotive, AEC-Q101 |
Package / Case | SOD-123H |
Product Attribute | Attribute Value |
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Package | Tape & Reel (TR) |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Surface Mount |
Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
Current - Average Rectified (Io) | 1.2A |
Capacitance @ Vr, F | - |
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A MICRO SMA
DIODE GP 600V 1.2A SOD123HE
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
TAIWAN SEMICONDUCTOR SOD123
DIODE GEN PURP 600V 1A SOD123W
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
1A, 600V, STANDARD RECOVERY RECT
1.2A, 600V, STANDARD RECOVERY RE
DIODE GEN PURP 600V 1A MICRO SMA
TSC SOD-123
DIODE GEN PURP 600V 1A SUB SMA
TSM SMD
1A, 600V, STANDARD RECOVERY RECT
DIODE GEN PURP 600V 1A SOD123W
DIODE GP 600V 1.2A SOD123HE
DIODE GEN PURP 600V 1A SOD123W
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![]() S1JLSHTaiwan Semiconductor Corporation |
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