ES1AL RQG
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | ES1AL RQG |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 50V 1A SUB SMA |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
Spannung - Sperr (Vr) (max) | 50 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 35 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 50 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 10pF @ 1V, 1MHz |
Grundproduktnummer | ES1A |
ES1AL RQG Einzelheiten PDF [English] | ES1AL RQG PDF - EN.pdf |
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
35NS, 1A, 50V, SUPER FAST RECOVE
DIODE GEN PURP 50V 1A DO214AC
35NS, 1A, 50V, SUPER FAST RECOVE
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
2024/06/6
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![]() ES1AL RQGTaiwan Semiconductor Corporation |
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