ES1AL M2G
Taiwan Semiconductor Corporation
Artikelnummer: | ES1AL M2G |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 50V 1A SUB SMA |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
Spannung - Sperr (Vr) (max) | 50 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 35 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 50 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 10pF @ 1V, 1MHz |
Grundproduktnummer | ES1A |
ES1AL M2G Einzelheiten PDF [English] | ES1AL M2G PDF - EN.pdf |
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A DO214AC
DIODE GEN PURP 50V 1A DO214AC
2024/06/6
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2023/12/20
![]() ES1AL M2GTaiwan Semiconductor Corporation |
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