ES1ALHM2G
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | ES1ALHM2G |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 50V 1A SUB SMA |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
Spannung - Sperr (Vr) (max) | 50 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 35 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 50 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 10pF @ 4V, 1MHz |
Grundproduktnummer | ES1A |
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
35NS, 1A, 50V, SUPER FAST RECOVE
DIODE GEN PURP 50V 1A SUB SMA
DIODE GEN PURP 50V 1A SUB SMA
2024/06/6
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![]() ES1ALHM2GTaiwan Semiconductor Corporation |
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