HS1DFSH
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS1DFSH |
---|---|
Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | 50NS, 1A, 200V, HIGH EFFICIENT R |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
14000+ | $0.1004 |
28000+ | $0.0999 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1 V @ 1 A |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | SOD-128 |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 50 ns |
Produkteigenschaften | Eigenschaften |
---|---|
Verpackung / Gehäuse | SOD-128 |
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 1 µA @ 200 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 20pF @ 4V, 1MHz |
DIODE GEN PURP 200V 1A SOD128
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SOD123F
DIODE GEN PURP 200V 1A SMA
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A DFLAT
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A DO214AC
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A THIN SMA
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS1DFSHTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|