HS1KL RTG
Taiwan Semiconductor Corporation
MFR -Teil # | Anzahl |
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![]() SMAJ5947B-TPInterface |
Artikelnummer: | HS1KL RTG |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 800V 1A SUB SMA |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
Spannung - Sperr (Vr) (max) | 800 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 75 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 15pF @ 4V, 1MHz |
Grundproduktnummer | HS1K |
HS1KL RTG Einzelheiten PDF [English] | HS1KL RTG PDF - EN.pdf |
DIODE GEN PURP 800V 1A SOD123W
SAFETY SWITCH SPRING LOCK
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SUB SMA
SAFETY SWITCH SPRING LOCK
SWITCH SAFETY 3PST-2NC 10A 125V
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
2024/06/6
2024/04/18
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2023/12/20
![]() HS1KL RTGTaiwan Semiconductor Corporation |
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