HS1KL MHG
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS1KL MHG |
---|---|
Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 800V 1A SUB SMA |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
Spannung - Sperr (Vr) (max) | 800 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 75 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 15pF @ 4V, 1MHz |
Grundproduktnummer | HS1K |
HS1KL MHG Einzelheiten PDF [English] | HS1KL MHG PDF - EN.pdf |
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A THIN SMA
DIODE GEN PURP 800V 1A SOD128
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
Interface
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
DIODE GEN PURP 800V 1A SUB SMA
75NS, 1A, 800V, HIGH EFFICIENT R
TSC SOD123FL
75NS, 1A, 800V, HIGH EFFICIENT R
DIODE GEN PURP 800V 1A SOD123F
75NS, 1A, 800V, HIGH EFFICIENT R
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS1KL MHGTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|