HS1JL RTG
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS1JL RTG |
---|---|
Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 600V 1A SUB SMA |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
Spannung - Sperr (Vr) (max) | 600 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 75 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 15pF @ 4V, 1MHz |
Grundproduktnummer | HS1J |
HS1JL RTG Einzelheiten PDF [English] | HS1JL RTG PDF - EN.pdf |
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 800V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
75NS, 1A, 600V, HIGH EFFICIENT R
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SOD123W
DIODE GEN PURP 600V 1A SUB SMA
HS1JR2 TSC
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
RECTIFIER, ULTRA-FAST/HIGH EFFIC
DIODE GEN PURP 600V 1A SUB SMA
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 800V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS1JL RTGTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|