RFP2N20
Harris Corporation
English
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
503+ | $0.60 |
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Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220AB |
Series | - |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
Power Dissipation (Max) | 25W (Tc) |
Package / Case | TO-220-3 |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
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![]() RFP2N20Harris Corporation |
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