HS1J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.47 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
Spannung - Sperr (Vr) (max) | 600 V |
Supplier Device-Gehäuse | DO-214AC (SMA) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Rückwärts-Erholzeit (Trr) | 75 ns |
Verpackung / Gehäuse | DO-214AC, SMA |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Diodentyp | Standard |
Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | - |
75NS, 1A, 600V, HIGH EFFICIENT R
50NS, 1A, 400V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 400V 1A SOD123W
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SOD128
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A THIN SMA
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A DO214AC
50NS, 1A, 400V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SOD123F
75NS, 1A, 600V, HIGH EFFICIENT R
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS1J-F1-0000HFYangzhou Yangjie Electronic Technology Co.,Ltd |
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