SPP02N60S5HKSA1
Infineon Technologies
Deutsch
Artikelnummer: | SPP02N60S5HKSA1 |
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Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | MOSFET N-CH 600V 1.8A TO220-3 |
Datenblätte: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 5.5V @ 80µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO220-3-1 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
Verlustleistung (max) | 25W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Tube |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
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Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 600 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 1.8A (Tc) |
Grundproduktnummer | SPP02N |
SPP02N60S5HKSA1 Einzelheiten PDF [English] | SPP02N60S5HKSA1 PDF - EN.pdf |
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SPP02N60S5HKSA1Infineon Technologies |
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