SPP03N60S5
Infineon Technologies
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
495+ | $0.61 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 5.5V @ 135µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO220-3-1 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
Verlustleistung (max) | 38W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Bulk |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 420 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 600 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 3.2A (Tc) |
SPP03N60S5 Einzelheiten PDF [English] | SPP03N60S5 PDF - EN.pdf |
MOSFET N-CH 600V 3.2A TO220-3
MOSFET N-CH 600V 4.5A TO220-3
SPP04N50 - COOLMOS N-CHANNEL POW
MOSFET N-CH 560V 4.5A TO220-3
MOSFET N-CH 650V 3.2A TO220-3
INFINEON TO-220
MOSFET N-CH 600V 1.8A TO220-3
LOW POWER_LEGACY
MOSFET N-CH 650V 4.5A TO220-3
LOW POWER_LEGACY
MOSFET N-CH 800V 2A TO220-3
SPP04N60C3 INF
N-CHANNEL POWER MOSFET
LOW POWER_LEGACY
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