1N4150TAP
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | 1N4150TAP |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 50V 150MA DO35 |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.27 |
10+ | $0.218 |
100+ | $0.1157 |
500+ | $0.0761 |
1000+ | $0.0517 |
2000+ | $0.0467 |
5000+ | $0.0406 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
Spannung - Sperr (Vr) (max) | 50 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-35 (DO-204AH) |
Geschwindigkeit | Small Signal =< 200mA (Io), Any Speed |
Serie | - |
Rückwärts-Erholzeit (Trr) | 4 ns |
Verpackung / Gehäuse | DO-204AH, DO-35, Axial |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Cut Tape (CT) |
Betriebstemperatur - Anschluss | -65°C ~ 175°C |
Befestigungsart | Through Hole |
Strom - Sperrleckstrom @ Vr | 100 nA @ 50 V |
Strom - Richt (Io) | 150mA |
Kapazität @ Vr, F | 2.5pF @ 0V, 1MHz |
Grundproduktnummer | 1N4150 |
1N4150TAP Einzelheiten PDF [English] | 1N4150TAP PDF - EN.pdf |
DIODE GP REV 50V 200MA DO35
DIODE GEN PURP 50V 200MA UBC
DIODE GEN PURP 50V 200MA DO213AA
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA UB
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 300MA DO35
DIODE GEN PURP REV 50V 200MA UB
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 150MA DO35
SIGNAL OR COMPUTER DIODE
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
DIODE GEN PURP 50V 200MA DO35
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![]() 1N4150TAPVishay General Semiconductor - Diodes Division |
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