XPQR3004PB,LXHQ
Toshiba Semiconductor and Storage
Artikelnummer: | XPQR3004PB,LXHQ |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | 40V U-MOS IX-H L-TOGL 0.3MOHM |
Datenblätte: | None |
RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $6.79 |
10+ | $6.098 |
100+ | $4.9959 |
500+ | $4.2529 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 3V @ 1mA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | L-TOGL™ |
Serie | Automotive, AEC-Q101, U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 0.3mOhm @ 200A, 10V |
Verlustleistung (max) | 750W (Tc) |
Verpackung / Gehäuse | 8-PowerBSFN |
Paket | Tape & Reel (TR) |
Betriebstemperatur | 175°C |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 26910 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 295 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Drain-Source-Spannung (Vdss) | 40 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 400A (Ta) |
Grundproduktnummer | XPQR3004 |
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET BVDSS: 41V~60V SOT523 T&R
MOSFET N-CH 75V 75A D2PAK
NCH 40V 65A, TO-252, POWER MOSFE
P-CHANNEL POWER MOSFET
30V N-CHANNEL ENHANCEMENT MODE M
650V, 30A, 4-PIN THD, TRENCH-STR
N-CHANNEL 600 V, 67 MOHM TYP., 4
SF3 650V EASY 40MOHM TO-247 AUTO
N-CHANNEL POWER MOSFET
MOSFET N-CH 80V 37A/330A HDSOP
MOSFET P-CH 8V 2A SOT-363
Interface
40V U-MOS IX-H L-TOGL 1.0MOHM
MOSFET N-CH 200V 5.2A D2PAK
MOSFET P-CH 20V 2.8A SOT23-3
MOSFET N-CH 30V 35A LFPAK
14A, 20V, 0.0084OHM, P-CHANNEL ,
MOSFET N-CH 100V 180A TO262
N-CHANNEL MOSFET, DPAK PACKAGE
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() XPQR3004PB,LXHQToshiba Semiconductor and Storage |
Anzahl*
|
Zielpreis (USD)
|