TK6A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TK6A50D(STA4,Q,M) |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N-CH 500V 6A TO220SIS |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.37 |
10+ | $1.227 |
100+ | $0.9563 |
500+ | $0.79 |
1000+ | $0.6237 |
2000+ | $0.5821 |
5000+ | $0.553 |
10000+ | $0.5322 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4.4V @ 1mA |
Vgs (Max) | ±30V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-220SIS |
Serie | π-MOSVII |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3A, 10V |
Verlustleistung (max) | 35W (Tc) |
Verpackung / Gehäuse | TO-220-3 Full Pack |
Paket | Tube |
Betriebstemperatur | 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 540 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 500 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 6A (Ta) |
Grundproduktnummer | TK6A50 |
TK6A50D(STA4,Q,M) Einzelheiten PDF [English] | TK6A50D(STA4,Q,M) PDF - EN.pdf |
TOSHIBA TO-220F
TK6A55DA TK6A55D TOSHIBA/
MOSFET N-CH 525V 6A TO220SIS
TEKMOS PLCC44
TK6A45DA T
TOSHIBA TO-220F
TOSHIBA TO-220F
TK6A60D TOSHIBA
TOSHIBA NA
TK6A50 TOS
TEKMOS SOP20
TK6A50D TOSHIBA
TK68HC11D0CFNE3 TEKMOS
TK6A55DA TOSHIBA
TEKMOS SOP-20
MOSFET N-CH 550V 5.5A TO220SIS
TK6A45DATA4 T
TK6A53D TOSHIBA
MOSFET N-CH 450V 5.5A TO220SIS
TK6A55D TOSHIBA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() TK6A50D(STA4,Q,M)Toshiba Semiconductor and Storage |
Anzahl*
|
Zielpreis (USD)
|