TK42E12N1,S1X
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TK42E12N1,S1X |
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Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N CH 120V 88A TO-220 |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.37 |
10+ | $1.223 |
100+ | $0.9533 |
500+ | $0.7875 |
1000+ | $0.6217 |
2000+ | $0.5803 |
5000+ | $0.5512 |
10000+ | $0.5305 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-220 |
Serie | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs | 9.4mOhm @ 21A, 10V |
Verlustleistung (max) | 140W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Tube |
Betriebstemperatur | 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 3100 pF @ 60 V |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 120 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 88A (Tc) |
Grundproduktnummer | TK42E12 |
TK42E12N1,S1X Einzelheiten PDF [English] | TK42E12N1,S1X PDF - EN.pdf |
TOSHIBA TO-3P-3
TOSHIBA TO-220F
ELECTRICAL TEST KIT
MOSFET N-CH 120V 42A TO220SIS
TOSHIBA TO-247
ELECTRICAL TEST KIT WITH IR THER
ELECTRICAL TEST KIT
MOSFET N-CH
MOSFET N-CH 100V 40A DPAK
TK42A12N1 TOSHIBA
TOSHIBA TO-252
TK42E12N1,S1X(S TOSHIBA
TOSHIBA TO220
TK42E12N1 TOSHIBA
TOSHIBA NA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() TK42E12N1,S1XToshiba Semiconductor and Storage |
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