S1BLHR3G
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | S1BLHR3G |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 100V 1A SUB SMA |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
Spannung - Sperr (Vr) (max) | 100 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 1.8 µs |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 175°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 9pF @ 4V, 1MHz |
Grundproduktnummer | S1B |
S1BLHR3G Einzelheiten PDF [English] | S1BLHR3G PDF - EN.pdf |
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SMB
S1BP6 TOSHIBA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
S1B_NL FAIRCHILD
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
1A, 100V, STANDARD RECOVERY RECT
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
2024/05/28
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S1BLHR3GTaiwan Semiconductor Corporation |
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