HS5G
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS5G |
---|---|
Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 400V 5A DO214AB |
Datenblätte: |
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RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
3000+ | $0.2763 |
6000+ | $0.2748 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Sperr (Vr) (max) | 400 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 50 ns |
Verpackung / Gehäuse | DO-214AB, SMC |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 400 V |
Strom - Richt (Io) | 5A |
Kapazität @ Vr, F | 80pF @ 4V, 1MHz |
Grundproduktnummer | HS5G |
DIODE GEN PURP 400V 5A DO214AB
PWR XFMR LAMINATED 10000VA CHAS
PWR XFMR LAMINATED CHAS MT
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
TRANSFORMER 50VA - 45KVA
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
PWR XFMR LAMINATED 15000VA CHAS
50NS, 5A, 400V, HIGH EFFICIENT R
DIODE GEN PURP 400V 5A DO214AB
50NS, 5A, 300V, HIGH EFFICIENT R
DIODE GEN PURP 400V 5A DO214AB
PWR XFMR LAMINATED 3000VA CHAS
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
XFORMER 15KVA 240X480-120/240
PWR XFMR LAMINATED 7500VA CHAS
PWR XFMR LAMINATED 5000VA CHAS
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS5GTaiwan Semiconductor Corporation |
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