HS1FL RFG
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS1FL RFG |
---|---|
Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 300V 1A SUB SMA |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
Spannung - Sperr (Vr) (max) | 300 V |
Technologie | Standard |
Supplier Device-Gehäuse | Sub SMA |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 50 ns |
Verpackung / Gehäuse | DO-219AB |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 300 V |
Strom - Richt (Io) | 1A |
Kapazität @ Vr, F | 20pF @ 4V, 1MHz |
Grundproduktnummer | HS1F |
HS1FL RFG Einzelheiten PDF [English] | HS1FL RFG PDF - EN.pdf |
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 400V 1A DO214AC
VENCIMENTO DO-214
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 300V 1A SUB SMA
PWR XFMR LAMINATED 750VA CHAS MT
50NS, 1A, 300V, HIGH EFFICIENT R
DIODE GEN PURP 300V 1A SOD123F
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 400V 1A DO214AC
DIODE GEN PURP 300V 1A SUB SMA
DIODE GEN PURP 300V 1A SUB SMA
HS1G R3 TSC
DIODE GEN PURP 300V 1A SUB SMA
50NS, 1A, 300V, HIGH EFFICIENT R
PWR XFMR LAMINATED 500VA CHAS MT
DIODE GEN PURP 300V 1A SUB SMA
50NS, 1A, 300V, HIGH EFFICIENT R
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS1FL RFGTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|