ESH3C M6G
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | ESH3C M6G |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 150V 3A DO214AB |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
Spannung - Sperr (Vr) (max) | 150 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 20 ns |
Verpackung / Gehäuse | DO-214AB, SMC |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 175°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 5 µA @ 150 V |
Strom - Richt (Io) | 3A |
Kapazität @ Vr, F | 45pF @ 4V, 1MHz |
Grundproduktnummer | ESH3 |
ESH3C M6G Einzelheiten PDF [English] | ESH3C M6G PDF - EN.pdf |
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() ESH3C M6GTaiwan Semiconductor Corporation |
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