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HomeProductsSTU10NM65N
STMicroelectronics
STU10NM65N Image
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STMicroelectronics STU10NM65N

Part Number: STU10NM65N
Manufacturer/Brand: STMicroelectronics
Part of Description: MOSFET N-CH 650V 9A IPAK
Datasheets:
1.STU10NM65N.pdf ···

Datasheets

STx10NM65N.pdf

STU10NM65N Page PDF

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RoHs Status: ROHS3 Compliant
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  • Specifications
  • Shopping Manual
  • Shipping Information
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  • STMicroelectronics STU10NM65N technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments STU10NM65N.
    Product Attribute Attribute Value
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±25V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package I-PAK
    Series MDmesh™ II
    Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V
    Power Dissipation (Max) 90W (Tc)
    Package / Case TO-251-3 Short Leads, IPak, TO-251AA
    Package Tube
    Operating Temperature 150°C (TJ)
    Product Attribute Attribute Value
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
    Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 9A (Tc)
    Base Product Number STU10N
  • Returns Policy
    Returns must be requested within 60 days of the invoice date and include:
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    Returns will not be accepted after 60 days. Returned items must be in original packaging and resalable condition. Returns due to customer errors at the time of quote or purchase will not be accepted. Contact customer service for return authorization before shipping.
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STU10NM65N Product Details

Mfr. Part

STU10NM65N

Manufacturer

Y-IC is a quality distributor of STMicroelectronics products. We provide customers with the best products and services.

Detailed Description

The STU10NM65N is a high-voltage, high-current N-channel MOSFET from STMicroelectronics' MDmesh™ II series. It's designed for use in a variety of power conversion and control applications.

Key Features

650V drain-to-source voltage (Vdss)

9A continuous drain current (Id) at 25°C

480mΩ maximum on-resistance (Rds(on)) at 4.5A, 10V

25nC maximum gate charge (Qg) at 10V

±25V maximum gate-to-source voltage (Vgs)

850pF maximum input capacitance (Ciss) at 50V

90W maximum power dissipation at 25°C

Key Advantages

High voltage and current handling capabilities

Low on-resistance for high efficiency

Robust gate-source voltage rating

Suitable for a wide range of power applications

Packaging

TO-251-3 Short Leads, IPak, TO-251AA package

Through-hole mounting

Lifecycle

The STU10NM65N is an obsolete product. Customers are advised to contact our sales team for information on equivalent or alternative models that may be available.

Key Application Areas

Switch-mode power supplies

Motor drives

Industrial controls

Lighting ballasts

Welding equipment

Datasheet

The most authoritative datasheet for the STU10NM65N is available on our website. Customers are recommended to download it for complete technical details.

Request for Quotation Now

Customers are recommended to obtain quotes for the STU10NM65N on our website. Get a quote now to take advantage of our limited-time offer.

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STU10NM65N Image

STU10NM65N

STMicroelectronics

MOSFET N-CH 650V 9A IPAK
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