SPI07N60S5
Infineon Technologies
Deutsch
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 5.5V @ 350µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO262-3-1 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
Verlustleistung (max) | 83W (Tc) |
Verpackung / Gehäuse | TO-262-3 Long Leads, I²Pak, TO-262AA |
Paket | Bulk |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 970 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 600 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 7.3A (Tc) |
SPI07N60S5 Einzelheiten PDF [English] | SPI07N60S5 PDF - EN.pdf |
AOBA 3kreel
N-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
MOSFET N-CH 600V 7.3A TO262-3
SMD LY
N-CHANNEL POWER MOSFET
AOBA 3kreel
N-CHANNEL POWER MOSFET
PANASONIC 0603+
AOBA 0603+
MOSFET N-CH 650V 7.3A TO262-3
MOSFET N-CH 600V 7.3A TO262-3
MOSFET N-CH 500V 7.6A TO262-3
N-CHANNEL POWER MOSFET
HUNGTAI 0603+
MOSFET N-CH 650V 7.3A TO262-3
N-CHANNEL POWER MOSFET
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() SPI07N60S5Infineon Technologies |
Anzahl*
|
Zielpreis (USD)
|