Mfr. Part
RJH60D2DPP-M0#T2
Manufacturer
Renesas Electronics Corporation
Y-IC is a quality distributor of Renesas Electronics Corporation products and will provide customers with the best products and services.
Detailed Description
The RJH60D2DPP-M0#T2 is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) device from Renesas Electronics Corporation. It is designed for various power electronics applications, such as motor drives, power supplies, and inverters.
Key Features
Trench IGBT technology
600V collector-emitter breakdown voltage
25A collector current rating
2.2V maximum collector-emitter saturation voltage
34W maximum power dissipation
100μJ turn-on and 160μJ turn-off switching energy
Standard gate input type
19nC gate charge
32ns turn-on and 85ns turn-off delay times
100ns reverse recovery time
Key Advantages
Excellent electrical performance for high-efficiency power conversion
Reliable operation with high junction temperature of 150°C
Suitable for a wide range of power electronics applications
Packaging
The RJH60D2DPP-M0#T2 is packaged in a TO-220-3 full pack (TO-220FL) through-hole configuration. This package provides good thermal and electrical characteristics for efficient heat dissipation and reliable operation.
Lifecycle
The RJH60D2DPP-M0#T2 is an active product. There are equivalent or alternative models available. Customers are advised to contact our sales team via the Y-IC website for more information on available options.
Key Application Areas
Motor drives
Power supplies
Inverters
Industrial automation
Renewable energy systems
Datasheet
The most authoritative datasheet for the RJH60D2DPP-M0#T2 is available on the Y-IC website. Customers are recommended to download the datasheet from the current product page.
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Customers are recommended to obtain quotes for the RJH60D2DPP-M0#T2 on the Y-IC website. Get a Quote today for this limited-time offer.
