RJK03E0DNS-00#J5
Renesas Electronics America Inc
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
319+ | $0.94 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | - |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-HWSON (3.3x3.3) |
Serie | - |
Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V |
Verlustleistung (max) | 20W (Tc) |
Verpackung / Gehäuse | 8-PowerWDFN |
Paket | Bulk |
Betriebstemperatur | 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 3050 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 4.5 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Drain-Source-Spannung (Vdss) | 30 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 30A (Ta) |
RJK03E0DNS-00#J5 Einzelheiten PDF [English] | RJK03E0DNS-00#J5 PDF - EN.pdf |
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RJK03E0DNS-00#J5Renesas Electronics America Inc |
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