RFD8P05SM
Fairchild Semiconductor
Deutsch
Ship From: Hong Kong
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Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-252, (D-Pak) |
Serie | - |
Rds On (Max) @ Id, Vgs | 300mOhm @ 8A, 10V |
Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Paket | Tube |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 20 V |
Typ FET | P-Channel |
FET-Merkmal | - |
Drain-Source-Spannung (Vdss) | 50 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 8A (Tc) |
RFD8P05SM Einzelheiten PDF [English] | RFD8P05SM PDF - EN.pdf |
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