NP82N04MDG-S18-AY
NEC Corporation
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
128+ | $2.35 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-220-3 |
Serie | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
Verlustleistung (max) | 1.8W (Ta), 143W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Tube |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | 175°C |
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Drain-Source-Spannung (Vdss) | 40 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 82A (Tc) |
NP82N04MDG-S18-AY Einzelheiten PDF [English] | NP82N04MDG-S18-AY PDF - EN.pdf |
MOSFET N-CH 40V 82A TO220-3
MOSFET N-CH 40V 82A TO262
MOSFET N-CH 40V 82A TO263
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MOSFET N-CH 40V 82A TO220-3
NEC TO-263
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MOSFET N-CH 40V 82A TO262
MOSFET N-CH 60V 80A TO263
MOSFET N-CH 40V 82A TO262-3
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NP80N055PDG RENESAS
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2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() NP82N04MDG-S18-AYNEC Corporation |
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