Mfr. Part
MIG75J101H
Manufacturer
TOSHIBA
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Detailed Description
The MIG75J101H is a high-performance Insulated Gate Bipolar Transistor (IGBT) module from Toshiba, designed for use in various industrial applications.
Key Features
High-speed switching
Low conduction losses
High current and voltage handling capabilities
Reliable and robust construction
Key Advantages
Improved efficiency in power conversion applications
Reduced system size and weight
Enhanced system reliability and performance
Packaging
Plastic package
6-pin configuration
Suitable for high-power, high-voltage applications
Lifecycle
The MIG75J101H is an active product. Equivalent or alternative models are available. Please contact our sales team via the website for more information.
Key Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Datasheet
The most authoritative datasheet for the MIG75J101H is available on our website. Customers are recommended to download the datasheet for detailed technical specifications.
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