Mfr. Part
RGW00TS65GC11
Manufacturer
Rohm Semiconductor is a quality semiconductor brand, and Y-IC is a reliable distributor that provides customers with the best products and services.
Detailed Description
The RGW00TS65GC11 is a single IGBT (Insulated Gate Bipolar Transistor) from Rohm Semiconductor. It is a trench field stop IGBT designed for use in a variety of power electronics applications.
Key Features
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 96A
Current Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Power Max: 254W
Switching Energy: 1.18mJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 141nC
Td (on/off) @ 25°C: 52ns/180ns
Key Advantages
High voltage and current handling capabilities
Low on-state voltage drop and switching losses
Suitable for a wide range of power electronics applications
Packaging
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Lifecycle
The RGW00TS65GC11 is not recommended for new designs. Customers should contact our sales team via the website for information on equivalent or alternative models.
Key Application Areas
The RGW00TS65GC11 IGBT is suitable for use in a variety of power electronics applications, such as motor drives, power supplies, and inverters.
Datasheet
The most authoritative datasheet for the RGW00TS65GC11 IGBT is available on our website. Customers are recommended to download the datasheet for detailed technical specifications and performance information.
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Customers are recommended to obtain quotes for the RGW00TS65GC11 IGBT on our website. Get a quote now or learn more about this product and our other offerings.
