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HomeProductsIRF7807D1
Infineon Technologies
IRF7807D1 Image
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See specs for product details.

Infineon Technologies IRF7807D1

Part Number: IRF7807D1
Manufacturer/Brand: Cypress Semiconductor (Infineon Technologies)
Part of Description: MOSFET N-CH 30V 8.3A 8SO
Datasheets:
1.IRF7807D1.pdf ···

IRF7807D1 Page PDF

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  • Specifications
  • Shopping Manual
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  • Infineon Technologies IRF7807D1 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments IRF7807D1.
    Product Attribute Attribute Value
    Vgs(th) (Max) @ Id 1V @ 250µA
    Vgs (Max) ±12V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package 8-SO
    Series FETKY™
    Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
    Power Dissipation (Max) 2.5W (Tc)
    Package / Case 8-SOIC (0.154", 3.90mm Width)
    Product Attribute Attribute Value
    Package Tube
    Mounting Type Surface Mount
    Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
    FET Type N-Channel
    FET Feature Schottky Diode (Isolated)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V
    Drain to Source Voltage (Vdss) 30 V
    Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
  • Returns Policy
    Returns must be requested within 60 days of the invoice date and include:
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    Returns will not be accepted after 60 days. Returned items must be in original packaging and resalable condition. Returns due to customer errors at the time of quote or purchase will not be accepted. Contact customer service for return authorization before shipping.
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IRF7807D1 Product Details

Mfr. Part

IRF7807D1

Manufacturer

Infineon Technologies is a reputable manufacturer of power semiconductors, including FETs and MOSFETs. Y-IC is an authorized distributor of Infineon products, ensuring customers receive genuine, high-quality devices and the best possible service.

Detailed Description

The IRF7807D1 is a N-channel power MOSFET with a Schottky diode in an 8-SOIC package. It is designed for use in a variety of power management and control applications.

Key Features

N-Channel MOSFET with Schottky diode

30V Drain-Source Voltage

8.3A Continuous Drain Current

25mΩ Maximum On-Resistance

17nC Maximum Gate Charge

Key Advantages

Low on-resistance for improved efficiency

Integrated Schottky diode for fast switching

Small 8-SOIC surface-mount package

Packaging

The IRF7807D1 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

Lifecycle

The IRF7807D1 is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Infineon or other manufacturers. Customers are advised to contact the Y-IC sales team for more information on available options.

Key Application Areas

Power management circuits

Motor control

Switching power supplies

Automotive electronics

Datasheet

The most up-to-date datasheet for the IRF7807D1 is available on the Y-IC website. Customers are encouraged to download the datasheet for detailed technical specifications and performance characteristics.

Request for Quotation Now

Customers are recommended to obtain quotes for the IRF7807D1 or alternative products on the Y-IC website. Visit the product page and click 'Get a Quote' to request pricing and availability information.

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IRF7807D1 Image

IRF7807D1

Infineon Technologies

MOSFET N-CH 30V 8.3A 8SO
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