IPG20N06S2L65AATMA1
Infineon Technologies
Deutsch
Artikelnummer: | IPG20N06S2L65AATMA1 |
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Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | MOSFET 2N-CH 55V 20A 8TDSON |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.05 |
10+ | $0.934 |
100+ | $0.7284 |
500+ | $0.6017 |
1000+ | $0.475 |
2000+ | $0.4434 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 2V @ 14µA |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TDSON-8-10 |
Serie | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
Leistung - max | 43W |
Verpackung / Gehäuse | 8-PowerVDFN |
Paket | Tape & Reel (TR) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Produkteigenschaften | Eigenschaften |
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Befestigungsart | Surface Mount, Wettable Flank |
Eingabekapazität (Ciss) (Max) @ Vds | 410pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
FET-Merkmal | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 55V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 20A |
Konfiguration | 2 N-Channel (Dual) |
Grundproduktnummer | IPG20N |
IPG20N06S2L65AATMA1 Einzelheiten PDF [English] | IPG20N06S2L65AATMA1 PDF - EN.pdf |
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