IRFD1Z3
Harris Corporation
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
579+ | $0.52 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 4-DIP, Hexdip |
Serie | - |
Rds On (Max) @ Id, Vgs | 3.2Ohm @ 250mA, 10V |
Verlustleistung (max) | 1W (Tc) |
Verpackung / Gehäuse | 4-DIP (0.300", 7.62mm) |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 50 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 60 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 400mA (Tc) |
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 250V 450MA 4DIP
MOSFET N-CH 100V 1.3A 4-DIP
MOSFET N-CH 250V 450MA 4DIP
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 200V 600MA 4DIP
VISHAY DIP4
MOSFET N-CH 200V 600MA 4-DIP
MOSFET N-CH 250V 450MA 4-DIP
0.6A 200V 1.500 OHM N-CHANNEL
MOSFET N-CH 100V 1.3A 4-DIP
MOSFET N-CH 250V 450MA 4DIP
IRFD210PBF. IR
MOSFET N-CH 200V 600MA 4DIP
MOSFET N-CH 100V 1.3A 4DIP
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2023/12/20
![]() IRFD1Z3Harris Corporation |
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