IRFBC42R
Harris Corporation
English
Ship From: Hong Kong
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Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220 |
Series | - |
Rds On (Max) @ Id, Vgs | 1.6Ohm @ 3.4A, 10V |
Power Dissipation (Max) | 125W (Tc) |
Package / Case | TO-220-3 |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
MOSFET N-CH 800V 1.8A TO-220AB
MOSFET N-CH 800V 1.8A TO-262
MOSFET N-CH 800V 1.8A TO-220AB
MOSFET N-CH 600V 6.2A D2PAK
MOSFET N-CH 600V 6.2A D2PAK
MOSFET N-CH 600V 6.2A D2PAK
IRFBC41LC IR
MOSFET N-CH 800V 1.8A D2PAK
MOSFET N-CH 600V 6.2A D2PAK
N-CHANNEL POWER MOSFET
IR TO263
MOSFET N-CH 800V 1.8A TO220AB
MOSFET N-CH 800V 1.8A TO220AB
IR TO220
MOSFET N-CH 800V 1.8A I2PAK
MOSFET N-CH 800V 1.8A D2PAK
MOSFET N-CH 600V 6.2A D2PAK
MOSFET N-CH 800V 1.8A TO220AB
MOSFET N-CH 600V 6.2A D2PAK
MOSFET N-CH 600V 6.2A D2PAK
June 6th, 2024
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December 20th, 2023
![]() IRFBC42RHarris Corporation |
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