IPD65R660CFD
Infineon Technologies
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
360+ | $0.83 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4.5V @ 200µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO252-3-313 |
Serie | CoolMOS™ CFD2 |
Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
Verlustleistung (max) | 62.5W (Tc) |
Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Paket | Bulk |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 615 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 650 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 6A (Tc) |
IPD65R660CFD Einzelheiten PDF [English] | IPD65R660CFD PDF - EN.pdf |
MOSFET N-CH 650V 10.1A TO252-3
MOSFET N-CH 650V 7.3A TO252-3
INFINEON TO-252
MOSFET N-CH 650V 6A TO252-3
MOSFET N-CH 650V 4.5A TO252-3
N-CHANNEL POWER MOSFET
MOSFET N-CH 650V 6A TO252-3
MOSFET N-CH 650V 7.3A TO252-3
INFINEON TO-252
MOSFET N-CH 650V 7.3A TO252-3
MOSFET N-CH 650V 6A TO252-3
INFINEON TO-252
INFINEON TO252
LOW POWER_LEGACY
MOSFET N-CH 650V 7A TO252-3
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() IPD65R660CFDInfineon Technologies |
Anzahl*
|
Zielpreis (USD)
|