IPB65R600C6
Infineon Technologies
Deutsch
Ship From: Hong Kong
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Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 3.5V @ 210µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO263-3-2 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
Verlustleistung (max) | 63W (Tc) |
Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Paket | Bulk |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 440 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 650 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 7.3A (Tc) |
IPB65R600C6 Einzelheiten PDF [English] | IPB65R600C6 PDF - EN.pdf |
N-CHANNEL POWER MOSFET
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