HS2M-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.47 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
Spannung - Sperr (Vr) (max) | 1000 V |
Supplier Device-Gehäuse | DO-214AA (SMB) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Rückwärts-Erholzeit (Trr) | 75 ns |
Verpackung / Gehäuse | DO-214AA, SMB |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Diodentyp | Standard |
Strom - Sperrleckstrom @ Vr | 5 µA @ 1000 V |
Strom - Richt (Io) | 2A |
Kapazität @ Vr, F | - |
DIODE GEN PURP 1KV 1.5A DO214AC
HS2M R5 TSC
DIODE GEN PURP 1KV 2A THIN SMA
DURA-PULL PUSH PULL CONNECTOR, C
DURA-PULL PUSH PULL CONNECTOR, C
RECTIFIER, ULTRA-FAST/HIGH EFFIC
DIODE GEN PURP 2A DO214AA
DIODE GEN PURP 1000V 2A DO214AC
DIODE GEN PURP 1KV 2A DO214AA
DIODE GEN PURP 1KV 1.5A DO214AC
DIODE GEN PURP 1.5A DO214AC
75NS, 2A, 1000V, HIGH EFFICIENT
DIODE GEN PURP 1KV 2A DO214AA
DIODE GEN PURP 1.5A DO214AC
CONN SEALING COVER BLACK
TAIWAN SEMICONDUCTOR DO-214AA
75NS, 1.5A, 1000V, HIGH EFFICIEN
DURA-PULL PUSH PULL CONNECTOR, C
CONN RCPT FMALE 9POS GOLD CRIMP
TAIWANSEMI SMA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() HS2M-F1-0000HFYangzhou Yangjie Electronic Technology Co.,Ltd |
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