ISL9R860S3ST
Fairchild/ON Semiconductor
English
Part Number: | ISL9R860S3ST |
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Manufacturer/Brand: | Fairchild (onsemi) |
Part of Description: | DIODE GEN PURP 600V 8A TO263-2 |
Datasheets: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
Quantity | Unit Price |
---|---|
800+ | $0.8678 |
1600+ | $0.6851 |
2400+ | $0.6395 |
5600+ | $0.6075 |
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Product Attribute | Attribute Value |
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Voltage - Forward (Vf) (Max) @ If | 2.4V @ 8A |
Voltage - DC Reverse (Vr) (Max) | 600V |
Supplier Device Package | TO-263AB (D²PAK) |
Speed | Fast Recovery = 200mA (Io) |
Series | Stealth™ |
Reverse Recovery Time (trr) | 30ns |
Packaging | Tape & Reel (TR) |
Product Attribute | Attribute Value |
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Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Surface Mount |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 100µA @ 600V |
Current - Average Rectified (Io) | 8A |
Capacitance @ Vr, F | - |
DIODE GEN PURP 600V 8A TO263AB
IGBT 430V 10A TO252AA
FAIRCHILD TO-220F-2
IGBT 430V 10A 130W TO252AA
IGBT 430V 10A 130W TO252AA
DIODE GEN PURP 600V 8A TO220F-2L
IGBT, 430V, 10A, 1.95V, 200MJ, D
DIODE GEN PURP 600V 8A TO220-2
ON TO-252
IGBT 430V 10A 130W TO220AB
DIODE GEN PURP 1.2KV 8A D2PAK
ISL9R860S3S FAIRCHILD
N-CHANNEL IGBT
DIODE GEN PURP 600V 8A TO220-2
DIODE GEN PURP 600V 8A TO220F-2L
INSULATED GATE BIPOLAR TRANSISTO
DIODE GEN PURP 600V 8A TO220F-2L
DIODE GEN PURP 600V 8A D2PAK
FAIRCHILD TO-252
DIODE GEN PURP 1.2KV 8A TO263
June 6th, 2024
April 18th, 2024
April 13th, 2024
December 20th, 2023
![]() ISL9R860S3STFairchild/ON Semiconductor |
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