1N459TR
Fairchild Semiconductor
Deutsch
Artikelnummer: | 1N459TR |
---|---|
Hersteller / Marke: | Fairchild (onsemi) |
Teil der Beschreibung.: | HIGH CONDUCTANCE LOW LEAKAGE DIO |
Datenblätte: |
|
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-35 (DO-204AH) |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | - |
Verpackung / Gehäuse | DO-204AH, DO-35, Axial |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Bulk |
Betriebstemperatur - Anschluss | 175°C (Max) |
Befestigungsart | Through Hole |
Strom - Sperrleckstrom @ Vr | 25 nA @ 175 V |
Strom - Richt (Io) | 500mA |
Kapazität @ Vr, F | 6pF @ 0V, 1MHz |
1N459TR Einzelheiten PDF [English] | 1N459TR PDF - EN.pdf |
DIODE GEN PURP 200V 500MA DO35
TEMPERATURE COMPENSATED
HIGH CONDUCTANCE LOW LEAKAGE DIO
DIODE GP REV 200V 150MA DO213AA
DIODE GEN PURP 200V 500MA DO35
DIODE GEN PURP 200V 500MA DO35
DIODE GP REV 200V 150MA DO35
DIODE GEN PURP 85V 200MA DO35
HIGH CONDUCTANCE LOW LEAKAGE DIO
DIODE GEN PURP 200V 500MA DO35
DIODE GEN PURP 200V 500MA DO35
TEMPERATURE COMPENSATED
SIGNAL OR COMPUTER DIODE
DIODE GEN PURP 85V 200MA DO35
DIODE GEN PURP 200V 500MA DO35
DIODE GP REV 85V 200MA DO35
TEMPERATURE COMPENSATED
DIODE GEN PURP 85V 200MA DO35
TEMPERATURE COMPENSATED
DIODE GEN PURP 200V 500MA DO35
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() 1N459TRFairchild Semiconductor |
Anzahl*
|
Zielpreis (USD)
|