SQS966ENW-T1_GE3
Vishay Siliconix
English
Part Number: | SQS966ENW-T1_GE3 |
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Manufacturer/Brand: | Electro-Films (EFI) / Vishay |
Part of Description: | MOSFET N-CHAN 60V |
Datasheets: |
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RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
Quantity | Unit Price |
---|---|
1+ | $0.98 |
10+ | $0.88 |
100+ | $0.6863 |
500+ | $0.567 |
1000+ | $0.4476 |
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Product Attribute | Attribute Value |
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Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® 1212-8W Dual |
Series | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
Power - Max | 27.8W (Tc) |
Package / Case | PowerPAK® 1212-8W Dual |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
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Mounting Type | Surface Mount, Wettable Flank |
Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Configuration | 2 N-Channel (Dual) |
Base Product Number | SQS966 |
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![]() SQS966ENW-T1_GE3Vishay Siliconix |
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