DB106-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.60 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Spitzensperr- (max) | 800 V |
Spannung - Forward (Vf) (Max) @ If | 1 V @ 500 mA |
Technologie | Standard |
Supplier Device-Gehäuse | DB-1 |
Verpackung / Gehäuse | 4-EDIP (0.300", 7.62mm) |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Diodentyp | Single Phase |
Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
Strom - Richt (Io) | 1 A |
BRIDGE RECT 1PHASE 800V 1A DB-M
RECTRON SOP
RECT BRIDGE 800V 1A DB
Interface
STS SOP4
DBS 800V 1.0A Diodes Bridge Re
WILLAS SOP4
DB106S-13-00-RO HY
DB105S-T RECTRON
BRIDGE RECT 1PHASE 600V 1A DB-M
BRIDGE RECT 1PHASE 800V 1A DBS
BRIDGE RECT 1PHASE 800V 1A DB-1
BRIDGE RECT 800V 1A DB-1
DB106S-47L-2 DIODE
DB105S-TG WILLAS
BRIDGE RECT 1PHASE 800V 1A DB
BRIDGE RECT 800V 1A DB-LS
BRIDGE RECT 1PHASE 600V 1A DB-S
BRIDGE RECT 1PHASE 800V 1A DB
BRIDGE RECT 1PHASE 800V 1A DB-1
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() DB106-B1-0000HFYangzhou Yangjie Electronic Technology Co.,Ltd |
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