Mfr. Part
FGH60N60UFDTU
Manufacturer
Y-IC is a quality distributor of onsemi products, providing customers with the best products and services.
Detailed Description
The FGH60N60UFDTU is a single IGBT (Insulated Gate Bipolar Transistor) from onsemi. It is a high-power, high-voltage IGBT designed for use in a variety of industrial and power conversion applications.
Key Features
Field Stop IGBT technology
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 120 A
Current Collector Pulsed (Icm): 180 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Power Max: 298 W
Switching Energy: 1.81mJ (on), 810µJ (off)
Standard Input Type
Gate Charge: 188 nC
Td (on/off) @ 25°C: 23ns/130ns
Reverse Recovery Time (trr): 47 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Key Advantages
High power handling capability
Fast switching performance
Low conduction losses
Reliable and rugged design
Suitable for a wide range of industrial and power conversion applications
Packaging
The FGH60N60UFDTU is packaged in a TO-247-3 through-hole package. It has a pin configuration and thermal characteristics suitable for high-power applications.
Lifecycle
The FGH60N60UFDTU is an active product, and there are equivalent or alternative models available from onsemi. Customers are advised to contact our sales team via the website for more information on alternative options.
Key Application Areas
Industrial motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Other high-power, high-voltage applications
Datasheet
The most authoritative datasheet for the FGH60N60UFDTU can be found on our website. Customers are recommended to download it for detailed technical specifications and performance information.
Request for Quotation Now
Customers are recommended to obtain quotes on our website. Get a quote, learn more, or take advantage of our limited time offer to secure the best pricing and availability for the FGH60N60UFDTU.
