RF1S630SM
Harris Corporation
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
290+ | $1.04 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-263AB |
Serie | - |
Rds On (Max) @ Id, Vgs | 400mOhm @ 5A, 10V |
Verlustleistung (max) | 75W (Tc) |
Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 600 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 200 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 6A (Tc) |
28A, 100V, 0.077 OHM, N-CHANNEL
N-CHANNEL POWER MOSFET
N-CHANNEL, POWER MOSFET
VB TO-263AB
18A, 200V, 0.180 OHM, N-CHANNEL
FAIRCHILD TO-263
N-CHANNEL POWER MOSFET
14A, 100V, 0.16OHM, N-CHANNEL PO
N-CHANNEL POWER MOSFET
MOSFET N-CH 30V 70A TO262AA
9A, 200V, 0.400 OHM, N-CHANNEL
FAIRCHI TO-262
MOSFET N-CH 200V 18A TO263AB
HARRIS TO-263
FAIRCHILD TO-263
FAIRCHILD TO-262
FCS TO-263
N-CHANNEL POWER MOSFET
INTERSIL TO263
2024/04/11
2023/12/20
2024/06/11
2024/11/15
RF1S630SMHarris Corporation |
Anzahl*
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Zielpreis (USD)
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