IGP01N120H2
Infineon Technologies
Deutsch
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
507+ | $0.59 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Kollektor-Emitter-Durchbruch (max) | 1200 V |
VCE (on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
Testbedingung | 800V, 1A, 241Ohm, 15V |
Td (ein / aus) bei 25 ° C | 13ns/370ns |
Schaltenergie | 140µJ |
Supplier Device-Gehäuse | PG-TO220-3-1 |
Serie | - |
Leistung - max | 28 W |
Verpackung / Gehäuse | TO-220-3 |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Bulk |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Eingabetyp | Standard |
IGBT-Typ | - |
Gate-Ladung | 8.6 nC |
Strom - Collector Pulsed (Icm) | 3.5 A |
Strom - Kollektor (Ic) (max) | 3.2 A |
IGP01N120H2 Einzelheiten PDF [English] | IGP01N120H2 PDF - EN.pdf |
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IGP01N120H2Infineon Technologies |
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Zielpreis (USD)
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