SSR2N60BTM
Fairchild Semiconductor
Deutsch
Ship From: Hong Kong
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Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-252-3 (DPAK) |
Serie | - |
Rds On (Max) @ Id, Vgs | 5Ohm @ 900mA, 10V |
Verlustleistung (max) | 2.5W (Ta), 44W (Tc) |
Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Paket | Bulk |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 490 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 600 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 1.8A (Tc) |
SSR2N60BTM Einzelheiten PDF [English] | SSR2N60BTM PDF - EN.pdf |
FSC TO-252
FAIRCHILD TO-252
SSR 1P PANEL MNT 10A@300VAC ZC 3
SSR 1P PANEL MNT 50A@300VAC ZC 3
KED SMD
SSR 1P PANEL MNT 25A@300VAC ZC 9
SSR 1P PANEL MNT 75A@300VAC ZC 9
KYO XX
SSR 1P PANEL MNT 10A@300VAC ZC 9
FAIRCHILD TO-252
SSR 1P PANEL MNT 50A@300VAC ZC 9
N-CHANNEL POWER MOSFET
Samsung SOT-252
SSR 1P PANEL MNT 25A@300VAC ZC 3
TO-252 SAMSUNG
N-CHANNEL POWER MOSFET
SEC TO-252
FAIRCHILD TO-252
KYOCER SMD
IGBT Modules
2024/10/8
2023/12/20
2024/04/29
2024/01/23
SSR2N60BTMFairchild Semiconductor |
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