IRFD111
Harris Corporation
Deutsch
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 4-DIP, Hexdip |
Serie | - |
Rds On (Max) @ Id, Vgs | 600mOhm @ 800mA, 10V |
Verlustleistung (max) | 1W (Tc) |
Verpackung / Gehäuse | 4-DIP (0.300", 7.62mm) |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 135 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 80 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 1A (Tc) |
MOSFET N-CH 60V 800MA 4DIP
MOSFET N-CH 60V 2.5A 4DIP
MOSFET N-CH 100V 1.3A 4-DIP
IR DIP
MOSFET N-CH 60V 2.5A 4-DIP
MOSFET N-CH 100V 1.3A 4-DIP
IR DIP-4
SMALL SIGNAL N-CHANNEL MOSFET
MOSFET N-CH 60V 800MA 4DIP
MOSFET N-CH 100V 1A 4DIP
MOSFET N-CH 100V 1.3A 4DIP
1A, 100V, 0.600 OHM, N-CHANNEL
1.3A, 100V, 0.300 OHM, N-CHANNEL
MOSFET N-CH 100V 1A 4DIP
MOSFET N-CH 100V 1A 4-DIP
MOSFET N-CH 60V 2.5A 4-DIP
MOSFET N-CH 60V 800MA 4-DIP
VISHAY DIP-4
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 60V 800MA 4DIP
2024/05/13
2024/04/23
2024/08/29
2024/09/9
IRFD111Harris Corporation |
Anzahl*
|
Zielpreis (USD)
|