DBL103G
Taiwan Semiconductor Corporation
Deutsch
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Spitzensperr- (max) | 200 V |
Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
Technologie | Standard |
Supplier Device-Gehäuse | DBL |
Serie | - |
Verpackung / Gehäuse | 4-DIP (0.300", 7.62mm) |
Paket | Tube |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Diodentyp | Single Phase |
Strom - Sperrleckstrom @ Vr | 2 µA @ 200 V |
Strom - Richt (Io) | 1 A |
DBL103G Einzelheiten PDF [English] | DBL103G PDF - EN.pdf |
BRIDGE RECT 1PHASE 50V 1A DBL
DIODE BRIDGE 1A 100V DBL
BRIDGE RECT 1PHASE 400V 1A DBL
DIODE BRIDGE 1A 50V DBL
BRIDGE RECT 1PHASE 400V 1A DBL
BRIDGE RECT 1PHASE 100V 1A DBL
BRIDGE RECT 1PHASE 400V 1A DBL
BRIDGE RECT 1PHASE 100V 1A DBL
DBL1035 DAEWOO
BRIDGE RECT 1PHASE 200V 1A DBL
DBL1027 DAEWOO
DBL 600V 1.0A Diodes Bridge Re
BRIDGE RECT 1PHASE 200V 1A DBL
DBL DIP
DBL1026 DBL
TAIWAN SEMICONDUCTOR DIP-4
BRIDGE RECT 1PHASE 400V 1A DBL
DIODE BRIDGE 1A 100V DBL
DIODE BRIDGE 1A 200V DBL
2024/09/20
2024/04/11
2024/06/14
2024/11/13
DBL103GTaiwan Semiconductor Corporation |
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